參數(shù)資料
型號: GS84118B-133
英文描述: x18 Synchronous SRAM
中文描述: x18同步SRAM
文件頁數(shù): 9/30頁
文件大?。?/td> 584K
代理商: GS84118B-133
Rev: 1.05 7/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
9/30
1999, Giga Semiconductor, Inc.
GS84118T/B-166/150/130/100
Truth Table For Read/Write/Compare/Fill Write Operation
Notes:
1.
2.
3.
4.
X means “don’t care,” H means “l(fā)ogic high,” L means “l(fā)ogic low.”
Write is the logic function of GW, BWE, BW1, BW2. See Byte Write Function table for detail.
CE is defined as CE1=L, CE2=H and CE3=L
All signals are synchronous and are sampled by CLK except OE and MOE. OE and MOE are asynchronous and drive the bus immediately.
Absolute Maximum Ratings
(Voltage reference to V
SS
= 0 V)
Symbol
Note: Permanent damage to the device may occur if the Absolute Maximun Ratings are exceeded. Functional operation should be restricted to
the recommended operation conditions. Exposure to higher than recommended voltages, for an extended period of time, could effect the
performance and reliability of this component.
CE
Write
DE
MOE
OE
Match
DQ
Read
L
H
X
X
L
Q
Write
L
L
L
X
H
D
Compare
L
H
L
L
H
Data Out
D
Fill Write
L
L
H
X
X
X
Match Deselect
H
X
X
L
X
High
High Z
Deselect
H
X
X
H
X
High Z
High Z
Description
Commerical
Unit
V
DD
Supply Voltage
–0.5 to 4.6
V
V
DDQ
Output Supply Voltage
–0.5 to V
DD
V
V
CLK
CLK Input Voltage
–0.5 to 6
V
V
in
Input Voltage
–0.5 to V
DD
+ 0.5
(
4.6 V max. )
V
V
out
Output Voltage
–0.5 to V
DD
+ 0.5
(
4.6 V max. )
V
I
out
Output Current per I/O
+/–20
mA
P
D
Power Dissipation
1.5
W
T
OPR
Operating Temperature
0 to 70
o
C
T
STG
Storage Temperature
–55 to 125
o
C
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