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參數(shù)資料
| 型號： | GS8641Z18GF-167T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 4M X 18 ZBT SRAM, 8 ns, PBGA165 |
| 封裝： | 1 MM PITCH, LEAD FREE, FBGA-165 |
| 文件頁數(shù)： | 7/32頁 |
| 文件大?。?/td> | 776K |
| 代理商： | GS8641Z18GF-167T |
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GS8641Z18/32/36F-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 3/2005
15/32
2004, GSI Technology
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
—
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
025
70
°C2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS8641Z18GF-300 | 制造商:GSI Technology 功能描述:72MB NBT SRAM PIPELINE/FLOWTHROUGH,PB-FREE 165BGA,300MHZ,5.5 - Trays |
| GS8641Z32GF-250 | 制造商:GSI Technology 功能描述:72MB NBT SRAM PIPELINE/FLOWTHROUGH,PB-FREE 165BGA,250MHZ,6.5 - Trays |
| GS8641Z36GF-167 | 制造商:GSI Technology 功能描述:72MB NBT SRAM PIPELINE/FLOWTHROUGH,PB-FREE 165BGA,167MHZ,8NS - Trays |
| GS8641Z36GF-200 | 制造商:GSI Technology 功能描述:72MB NBT SRAM PIPELINE/FLOWTHROUGH,PB-FREE 165BGA,200MHZ,7.5 - Trays |
| GS8641Z36GF-250 | 制造商:GSI Technology 功能描述:72MB NBT SRAM PIPELINE/FLOWTHROUGH,PB-FREE 165BGA,250MHZ,6.5 - Trays |
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