參數(shù)資料
型號(hào)： GS864418E-225V
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
中文描述： 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 1/32頁(yè)
文件大小： 811K
代理商： GS864418E-225V
Preliminary
GS864418/36E-xxxV
4M x 18, 2M x 36
72Mb S/DCD Sync Burst SRAMs
250 MHz
–
133MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
165-Bump BGA
Commercial Temp
Industrial Temp
Rev: 1.05 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/32
2003, GSI Technology
Features
FT pin for user-configurable flow through or pipeline operation
Single/Dual Cycle Deselect selectable
IEEE 1149.1 JTAG-compatible Boundary Scan
ZQ mode pin for user-selectable high/low output drive
1.8 V or 2.5 V core power supply and I/O
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to SCD x18/x36 Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 165-bump BGA package
RoHS-compliant 165-bump BGA package available
Functional Description
Applications
The GS864418/36E-xxxV is a
75,497,472
-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
SCD and DCD Pipelined Reads
The GS864418/36E-xxxV is a SCD (Single Cycle Deselect) and
DCD (Dual Cycle Deselect) pipelined synchronous SRAM.
DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDrive
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
The GS864418/36E-xxxV operates on a 1.8 V or 2.5 V power
supply. All inputs are 1.8 V and 2.5 V compatible. Separate output
power (V
DDQ
) pins are used to decouple output noise from the
internal circuits and are 1.8 V and 2.5 V compatible.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
3.0
4.0
4.4
5.0
6.0
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x36)
t
KQ
tCycle
Curr (x18)
Curr (x36)
3.0
3.0
3.0
3.3
6.7
3.5
7.5
ns
ns
385
450
6.5
6.5
265
290
360
415
6.5
6.5
265
290
335
385
6.5
6.5
265
290
305
345
8.0
8.0
255
280
295
325
8.5
8.5
240
265
265
295
8.5
8.5
225
245
mA
mA
ns
ns
mA
mA
Flow
Through
2-1-1-1
相關(guān)PDF資料
PDF描述
GS864418E-250 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250I 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS8644ZV36B-133 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644ZV72C-166I 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644ZV72C-200 72Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864418E-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418GB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/3NS 119FBGA - Trays
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