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參數(shù)資料
| 型號： | GS864418E-225V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 4M X 18 CACHE SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 15/32頁 |
| 文件大?。?/td> | 811K |
| 代理商： | GS864418E-225V |
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AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
—
1.0
1.0
1.3
0.2
6.5
—
3.0
3.0
1.5
0.5
1.3
1.5
Max
—
2.3
—
—
—
—
—
6.5
—
—
—
—
—
—
Min
4.4
—
1.0
1.0
1.3
0.3
6.5
—
3.0
3.0
1.5
0.5
1.3
1.5
Max
—
2.5
—
—
—
—
—
6.5
—
—
—
—
—
—
Min
5.0
—
1.0
1.0
1.4
0.4
6.5
—
3.0
3.0
1.5
0.5
1.3
1.5
Max
—
2.7
—
—
—
—
—
6.5
—
—
—
—
—
—
Min
6.0
—
1.0
1.0
1.5
0.5
7.0
—
3.0
3.0
1.5
0.5
1.3
1.5
Max
—
2.9
—
—
—
—
—
7.0
—
—
—
—
—
—
Min
6.7
—
1.0
1.0
1.5
0.5
7.5
—
3.0
3.0
1.5
0.5
1.5
1.7
Max
—
3.3
—
—
—
—
—
7.5
—
—
—
—
—
—
Min
7.5
—
1.0
1.0
1.5
0.5
8.5
—
3.0
3.0
1.5
0.5
1.7
2
Max
—
3.5
—
—
—
—
—
8.5
—
—
—
—
—
—
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
G to output in Low-Z
tKC
tKQ
tKQX
tLZ
1
tS
tH
tKC
tKQ
tKQX
tLZ
1
tS
tH
tKH
tKL
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Flow
Through
tHZ
1
1.0
2.3
1.0
2.5
1.0
2.7
1.0
2.9
1.0
3.0
1.0
3.0
ns
tOE
tOLZ
1
tOHZ
1
tZZS
2
tZZH
2
tZZR
—
0
2.3
—
—
0
2.5
—
—
0
2.7
—
—
0
2.9
—
—
0
3.3
—
—
0
3.5
—
ns
ns
G to output in High-Z
—
2.3
—
2.5
—
2.7
—
2.9
—
3.0
—
3.0
ns
ZZ setup time
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
ZZ recovery
1
—
—
1
—
—
1
—
—
1
—
—
1
—
—
1
—
—
ns
ns
20
20
20
20
20
20
Preliminary
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
15/32
2003, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS864418E-250 | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-250I | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS8644ZV36B-133 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644ZV72C-166I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8644ZV72C-200 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864418E-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418GB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/3NS 119FBGA - Trays |
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