參數(shù)資料
型號： GS864418E-225V
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
中文描述： 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù)： 11/32頁
文件大?。?/td> 811K
代理商： GS864418E-225V
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to V
DD
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Preliminary
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
11/32
2003, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS864418E-250 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250I 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS8644ZV36B-133 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644ZV72C-166I 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644ZV72C-200 72Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864418E-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418GB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/3NS 119FBGA - Trays
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