參數(shù)資料
型號: GS8644V18B
廠商: GSI TECHNOLOGY
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 4米× 18,200萬× 36,100萬× 72 72Mb的S /雙氰胺同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 15/40頁
文件大?。?/td> 843K
代理商: GS8644V18B
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GS8644V18(B/E)/GS8644V36(B/E)/GS8644V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
15/40
2003, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
相關PDF資料
PDF描述
GS8644V18B-133 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-133I 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-150 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-150I 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-166 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相關代理商/技術(shù)參數(shù)
參數(shù)描述
GS8644V18B-133 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 8.5NS/3.5NS 119FBGA - Trays
GS8644V18B-133I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 8.5NS/3.5NS 119FBGA - Trays
GS8644V18B-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 7.5NS/3.3NS 119FBGA - Trays
GS8644V18B-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V18B-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs