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參數(shù)資料
| 型號： | GS880F18T-14T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 14 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 310K |
| 代理商： | GS880F18T-14T |
Rev: 1.06 9/2000
11/22
2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880F18/36T-11/11.5/12/14/18
Note: These parameters are sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Capacitance
(TA = 25
oC, f = 1 MHZ, V
DD = 3.3 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
6
7
pF
Package Thermal Characteristics
Rating
Layer Board
Symbol
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
RΘJA
24
°C/W
1,2
Junction to Case (TOP)
—
RΘJC
9
°C/W
3
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
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