參數(shù)資料
型號(hào)： GS880Z18CT-250IVT
廠(chǎng)商： GSI TECHNOLOGY
元件分類(lèi)： SRAM
英文描述： 512K X 18 ZBT SRAM, QFP100
封裝： TQFP-100
文件頁(yè)數(shù)： 6/24頁(yè)
文件大?。?/td> 804K
代理商： GS880Z18CT-250IVT
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage on VDDQ Pins
–0.5 to VDD
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
GS880Z18/32/36CT-xxxV
Rev: 1.02a 12/2010
14/24
2010, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
1.8 V Supply Voltage
VDD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
1.8 V VDDQ I/O Supply Voltage
VDDQ1
1.7
1.8
VDD
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
VDD
V
VDDQ2 & VDDQ1 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V
Note:
Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device.
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