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參數(shù)資料
| 型號(hào)： | GTT2625 |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 308K |
| 代理商： | GTT2625 |
1/4
ISSUED DATE :2006/03/28
REVISED DATE :
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Description
The GTT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2625 is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Low On-resistance
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 MAX.
L
0.45 REF.
A1
0
0.10
L1
0.60 REF.
A2
0.70
1.00
0°
10°
c
0.12 REF.
b
0.30
0.50
D
2.70
3.10
e
0.95 REF.
E
2.60
3.00
e1
1.90 REF.
E1
1.40
1.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current3
ID @TA=25 :
-2.3
A
Continuous Drain Current3
ID @TA=70 :
-2.0
A
Pulsed Drain Current1
IDM
-20
A
Total Power Dissipation
PD @TA=25 :
1.2
W
Linear Derating Factor
0.01
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
110
/W
BVDSS
-30V
RDS(ON)
135m
ID
-2.3A
Pb Free Plating Product
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