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參數(shù)資料
| 型號： | GTT2625 |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 308K |
| 代理商： | GTT2625 |
2/4
ISSUED DATE :2006/03/28
REVISED DATE :
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.02
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-0.5
-
-1.2
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
3.3
-
S
VDS=-5V, ID=-2.0A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±12V
Drain-Source Leakage Current(Tj=25 : )
-
-1
uA
VDS=-30V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
-25
uA
VDS=-24V, VGS=0
-
135
VGS=-10V, ID=-2.0A
-
185
VGS=-4.5V, ID=-1.6A
Static Drain-Source On-Resistance2
RDS(ON)
-
265
m
VGS=-2.5V, ID=-1.0A
Total Gate Charge2
Qg
-
4
6
Gate-Source Charge
Qgs
-
0.5
-
Gate-Drain (“Miller”) Change
Qgd
-
2
-
nC
ID=-2.0A
VDS=-24V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
5
-
Rise Time
Tr
-
6
-
Turn-off Delay Time
Td(off)
-
20
-
Fall Time
Tf
-
3
-
ns
VDS=-15V
ID=-1.0A
VGS=-10V
RG=3.3
RD=15
Input Capacitance
Ciss
-
265
425
Output Capacitance
Coss
-
42
-
Reverse Transfer Capacitance
Crss
-
32
-
pF
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-1.0A, VGS=0V
Reverse Recovery Time2
Trr
-
21
-
ns
Reverse Recovery Charge
Qrr
-
16
-
Nc
IS=-2.0A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 180 : /W when mounted on Min. copper pad.
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