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參數(shù)資料
| 型號(hào)： | H5N1503P |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | H5N1503P |
H5N1503P
Rev.1.00, Mar.10.2004, page 3 of 6
Main Characteristics
200
150
100
50
0
50
100
150
200
300
100
30
10
3
1
1
3
10
30
100
300
1000
0.3
0.1
1000
Ta = 25
°
C
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
100
μ
s
PW=10ms(1sho)
DCOperaion(Tc=25
°
C)
Operation in
this area is
limited by R
DS(on)
10
μ
s
100
80
60
40
20
0
4
8
12
16
20
200
160
120
80
40
0
2
4
6
8
10
10 V
V
GS
= 5 V
5.5 V
Tc = 75
°
C
25
°
C
–25
°
C
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
6 V
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Pulse Test
8 V
6.5 V
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
2.5
2
1.5
1
0.5
0
4
8
12
16
20
1
5
20
100
2
10
50
0.2
0.1
0.05
0.02
0.01
I = 70 A
35 A
10 A
V = 10 V
Pulse Test
D
D
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
Pulse Test
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PDF描述 |
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| H5N1503P-E | Silicon N Channel MOS FET High Speed Power Switching |
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| H5N2004DS | Datasheet|ADE-208-1372|MAR.20.01|58K |
| H5N2007FN | Silicon N Channel MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N1503P-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N1506P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N1506P-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N2001LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2001LD-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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