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參數資料
| 型號： | H5N1503P |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數： | 5/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | H5N1503P |
H5N1503P
Rev.1.00, Mar.10.2004, page 5 of 6
0
0.4
0.8
1.2
1.6
2.0
200
160
120
80
40
5
4
3
2
1
-50
0
50
100
150
200
0
Case Temperature Tc (
°
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
G
G
V = 10 V
Source to Drain Voltage V
SD
(V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V = 0 V
10 V
5 V
I = 10mA
1mA
0.1mA
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 75 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t
f
Switching Time Test Circuit
Waveform
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
DM
P
PW
T
D =T
ch – c(t) = s (t) ch – c
ch – c = 0.833
°
C/W, Tc = 25
°
C
θ
θ
Tc = 25
°
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
Pulse Width PW (s)
N
γ
Normalized Transient Thermal Impedance vs. Pulse Width
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相關代理商/技術參數 |
參數描述 |
|---|---|
| H5N1503P-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N1506P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N1506P-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N2001LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2001LD-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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