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參數(shù)資料
| 型號(hào)： | H5N2004DS |
| 英文描述： | Datasheet|ADE-208-1372|MAR.20.01|58K |
| 中文描述： | 技術(shù)資料|腺- 208 - 1372 | MAR.20.01 | 5.8萬(wàn) |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | H5N2004DS |
H5N2004DL, H5N2004DS
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D
(pulse)
Note 1
I
DR
200
V
Gate to source voltage
±30
V
Drain current
8
A
Drain peak current
32
A
Body-drain diode reverse drain
current
8
A
Body-drain diode reverse drain peak
current
I
DR
(pulse)
Note 1
32
A
Avalanche current
I
AP
Note 3
Pch
Note 2
7
A
Channel dissipation
30
W
Channel to case thermal Impedance
θ
ch-c
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tc = 25°C
3. Tch 150°C
Tstg
–55 to +150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| H5N2004DSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2005DL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2005DL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2005DS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2005DSTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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