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參數(shù)資料
| 型號(hào)： | H5N2007FN |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 105K |
| 代理商： | H5N2007FN |
H5N2007FN
Rev.1.00, May.28.2004, page 4 of 7
0.200
0.160
0.120
0.080
0.040
–40
0
40
80
120
160
0
0.2
0.5
2
5
20
50 100
100
20
50
5
10
2
0.5
1
0.2
1
10
25
°
C
Tc = –25
°
C
75
°
C
V = 10 V
Case Temperature Tc (
°
C)
S
D
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
V = 10 V
Pulse Test
I = 45 A
D
S
Drain Current I
D
(A)
Switching Characteristics
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
0
20
40
60
80
100
2000
5000
1000
100
200
500
500
400
300
200
100
0
20
16
12
8
4
20
Gate Charge Qg (nC)
40
60
80
100
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
20
50
10
I = 45 A
V
DD
V
GS
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / μs
V = 0, Ta = 25
°
C
V = 160 V
100 V
50 V
r
d(on)
t
d(off)
t
tf
V = 10 V, V = 100 V
PW = 5
μ
s, duty < 1 %
R =10
r
Reverse Drain Current I
DR
(A)
R
D
D
G
G
Dynamic Input Characteristics
tf
10000
Typical Capacitance vs.
Drain to Source Voltage
C
Drain to Source Voltage V
DS
(V)
V = 0
f = 1 MHz
Ciss
Coss
Crss
22.5 A
12.5 A
V = 50 V
100 V
160 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2007FN-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2008P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2008P-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine |
| H5N2301PF-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N2305P-E | 制造商:Renesas Electronics Corporation 功能描述: |
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