參數(shù)資料
型號: H5N2007FN
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 5/8頁
文件大?。?/td> 105K
代理商: H5N2007FN
H5N2007FN
Rev.1.00, May.28.2004, page 5 of 7
0
0.4
0.8
1.2
1.6
2.0
100
80
60
40
20
5
4
3
2
1
-50
0
50
100
150
200
0
Case Temperature Tc (
°
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
G
G
V = 10 V
Source to Drain Voltage V
SD
(V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V = 0 V
10 V
5 V
I = 10mA
1mA
0.1mA
Normalized Transient Thermal Impedance vs. Pulse Width
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
1
0.3
0.1
0.03
0.01
3
N
γ
0.001
0.003
1htple
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Tc = 25
°
C
DM
P
PW
T
D =T
ch – c(t) = s (t) ch – c
ch – c = 4.17
°
C/W, Tc = 25
°
C
θ
θ
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5N2007FN-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H5N2008P 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H5N2008P-E 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine
H5N2301PF-E 制造商:Renesas Electronics Corporation 功能描述:
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