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參數(shù)資料
| 型號(hào)： | H5N2305PF-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOSFET High Speed Power Switching |
| 中文描述： | 硅N溝道MOSFET高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 94K |
| 代理商： | H5N2305PF-E |
H5N2305PF
Rev.2.00, Jun.25.2004, page 3 of 9
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
V
(BR)DSS
Min
Typ
Max
Unit
Test condition
I
D
= 10 mA, V
GS
= 0
Drain to Source breakdown
voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Body-drain diode reverse recovery
charge
Notes: 4. Pulse test
230
—
—
V
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
—
—
2.5
22
—
—
—
—
38
0.030
1
±0.1
4.0
—
0.038
μ
A
μ
A
V
S
V
DS
= 230 V, V
GS
= 0
V
GS
= ±30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 17.5A, V
DS
= 10 V
Note4
I
D
= 17.5A, V
GS
= 10 V
Note4
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DF
trr
—
—
—
—
—
—
—
—
—
—
—
—
5200
690
50
60
130
180
120
105
25
37
0.92
180
—
—
—
—
—
—
—
—
—
—
1.4
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 17.5 A
R
L
= 5.7
V
GS
= 10 V
Rg = 10
V
DD
= 160 V
V
GS
= 10 V
I
D
= 35 A
I
F
= 35 A, V
GS
= 0
Note4
I
F
= 35 A, V
GS
= 0
diF/dt = 100 A/
μ
s
Qrr
—
1.3
—
μ
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2306PF | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2306PF-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 230V 30A 3-Pin(3+Tab) TO-3PFM |
| H5N2501LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2501LD_10 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2501LD-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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