參數(shù)資料
型號: H5N2305PF-E
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOSFET High Speed Power Switching
中文描述: 硅N溝道MOSFET高速電源開關(guān)
文件頁數(shù): 4/10頁
文件大小: 94K
代理商: H5N2305PF-E
H5N2305PF
Rev.2.00, Jun.25.2004, page 4 of 9
Main Characteristics
80
60
40
20
0
50
100
150
200
30
10
3
1
0.3
0.1
1
3
0.1 0.3
10
30 100 300 1000
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
0.03
0.01
100
300
1000
Ta = 25
°
C
V = 5 V
7 V
Tc = 75
°
C
25
°
C
-25
°
C
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
1ms
PW=10ms(1sho)
DCOpeaion
(Tc=25
°
C
10μs
5.5 V
6 V
8 V
10 V
Operation in
this area is
limited by R
DS(on)
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