參數(shù)資料
型號(hào): H5N2305PF
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOSFET High Speed Power Switching
中文描述: 硅N溝道MOSFET高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 94K
代理商: H5N2305PF
H5N2305PF
Rev.2.00, Jun.25.2004, page 2 of 9
Absolute Maximum Rating
(Ta = 25
°
C)
Unit
Item
Symbol
Rating
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain
current
Body-drain diode reverse drain
peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
θ
ch-c
Channel temperature
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
150
°
C
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
230
±30
35
140
35
V
V
A
A
A
Note1
I
DR (pulse)
Note1
140
A
I
AP
Pch
Note2
Note3
18
60
2.08
150
–55 to +150
A
W
°
C /W
°
C
°
C
Tch
Tstg
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