參數(shù)資料
型號(hào): H5N2305PF
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOSFET High Speed Power Switching
中文描述: 硅N溝道MOSFET高速電源開關(guān)
文件頁(yè)數(shù): 5/10頁(yè)
文件大?。?/td> 94K
代理商: H5N2305PF
H5N2305PF
Rev.2.00, Jun.25.2004, page 5 of 9
2
1.6
1.2
0.8
0.4
0
4
8
12
16
20
1
20
300
1000
100
2
10
0.1
0.05
0.02
0.01
0.1
0.08
0.06
0.04
0.02
–25
0
25
50
75
100 125 150
0
0.1
0.3
3
30
1000
100
20
10
50
5
2
1
0.5
0.2
0.1
1
10
300
100
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
Drain Current I
D
(A)
D
D
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
°
C)
S
D
(
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
25
°
C
Tc = –25
°
C
75
°
C
V = 10 V
Pulse Test
V
GS
= 10 V
Pulse Test
5 A
Pulse Test
Pulse Test
V
GS
= 10 V,15V
I = 35 A
17.5 A
17.5 A
I
D
= 35 A
5 A
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