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參數(shù)資料
| 型號(hào)： | H5N2510DS |
| 英文描述： | Datasheet|ADE-208-1379|MAR.20.01|35K |
| 中文描述： | 技術(shù)資料|腺- 208 - 1379 | MAR.20.01 |為35K |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | H5N2510DS |
H5N2503P
Rev.1, Jun. 2002, page 2 of 10
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D
(pulse)
I
DR
250
V
Gate to source voltage
±30
V
Drain current
50
A
Drain peak current
Note1
200
A
Body-drain diode reverse drain
current
50
A
Body-drain diode reverse drain peak
current
I
DR
(pulse)
Note1
200
A
Avalanche current
I
AP
Pch
θ
ch-c
Tch
Note3
50
A
Channel dissipation
Note2
150
W
°
C/W
°
C
°
C
Channel to case Thermal Impedance
0.833
Channel temperature
150
Storage temperature
Notes: 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Tch
≤
150
°
C
Tstg
–55 to +150
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