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參數(shù)資料
| 型號： | H5N2510DS |
| 英文描述： | Datasheet|ADE-208-1379|MAR.20.01|35K |
| 中文描述： | 技術資料|腺- 208 - 1379 | MAR.20.01 |為35K |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | H5N2510DS |
H5N2503P
Rev.1, Jun. 2002, page 6 of 10
S
Drain Current I
D
(A)
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
C
Drain to Source Voltage V
DS
(V)
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
0
20
40
60
80
100
20000
50000
10000
1000
2000
5000
500
400
300
200
100
0
20
16
12
8
4
40
Gate Charge Qg (nC)
80
120
160
200
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
200
500
100
50
V = 50 V
100 V
200 V
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 50 A
V
DS
V
GS
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / μs
V = 0, Ta = 25
°
C
V = 200 V
100 V
50 V
r
d(on)
t
d(off)
t
tf
V = 10 V, V = 125 V
PW = 10
μ
s, duty < 1 %
R =10
r
Reverse Drain Current I
DR
(A)
R
D
D
G
G
Dynamic Input Characteristics
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