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參數(shù)資料
| 型號： | H5N3011P-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 118K |
| 代理商： | H5N3011P-E |
H5N3011P
Rev.2.00, Aug.05.2004, page 4 of 6
0.2
0.16
0.12
0.08
0.04
25
0
25
50
75
100 125
150
0
0.3
0.1
3
30
100
100
30
10
3
1
0.3
0.1
1
10
Case Temperature Tc (
°
C)
S
D
(
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
25
°
C
Tc =
25
°
C
75
°
C
V
= 10 V
Pulse Test
V
GS
= 10 V
Pulse Test
I
D
= 88 A
20 A
44 A
0.1
0.3
Reverse Drain Current I
DR
(A)
1
3
10
30
100
1000
200
500
100
20
50
10
2
5
1
0
50
100
150
30000
10000
100000
1000
3000
400
0
16
300
12
200
8
100
4
40
80
120
160
200
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
300
100
30
10
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 88 A
V
DS
V
GS
R
Body-Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
D
D
G
G
Dynamic Input Characteristics
Drain Current I
D
(A)
S
Switching Characteristics
di / dt = 100 A /
μ
s
V
GS
= 0, Ta = 25
°
C
V
DD
= 240 V
100 V
50 V
tr
td(on)
td(off)
tf
V
GS
= 10 V, V
DD
= 150 V
PW = 5
μ
s, duty < 1 %
R
G
= 10
tr
tf
V
DD
= 50 V
100 V
240 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N5001FM | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N5001FM_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N5001FM-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N5004PL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N5004PL(E) | 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 50A 3-Pin(3+Tab) TO-3PL Box |
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