參數(shù)資料
型號(hào): H5N3011P-E
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 7/7頁
文件大?。?/td> 118K
代理商: H5N3011P-E
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
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diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
home page (http://www.renesas.com).
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use.
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Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Renesas Technology America, Inc.
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Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
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Ltd.
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2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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