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參數(shù)資料
| 型號(hào)： | H7N0312AB |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 117K |
| 代理商： | H7N0312AB |
H7N0312AB
Rev.2, Aug. 2002, page 2 of 2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
θ
ch-c
Tch
30
V
Gate to source voltage
±20
V
Drain current
85
A
Drain peak current
Note 1
340
A
Body-drain diode reverse drain current
85
A
Channel dissipation
Note 2
125
W
Channel to Case Thermal Impedance
1.0
°C/W
Channel temperature
150
°C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
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| H7N0312AB_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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