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參數(shù)資料
| 型號： | H7N0312AB |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 117K |
| 代理商： | H7N0312AB |
H7N0312AB
Rev.2, Aug. 2002, page 4 of 4
Main Characteristics
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
100
80
60
40
20
0
2
4
6
8
10
100
80
60
40
20
0
1
2
3
4
5
Tc = 75
°
C
25
°
C
-25
°
C
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
V = 10 V
Pulse Test
1000
Tc = 25
°
C
1 shot Pulse
PW=10ms
10
μ
s
100
μ
s
DCOperaion
1ms
V = 2.5 V
10 V
5 V
4 V
3.5 V
3.2 V
Pulse Test
3.0 V
2.8 V
160
120
80
40
0
50
100
150
200
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Operation in
this area is
limited by R
DS(on)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| H7N0312AB_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312AB-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| H7N0312LD_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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