參數(shù)資料
型號: H7N0312AB
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 9/11頁
文件大?。?/td> 117K
代理商: H7N0312AB
H7N0312AB
Rev.2, Aug. 2002, page 7 of 7
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Source to Drain Voltage V
SD
(V)
R
D
N
γ
s
100
80
60
40
20
0
0.4
0.8
1.2
1.6
2.0
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
5 V
V = 0 V
10 V
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
Tc = 25
°
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
DM
P
PW
T
D =T
ch - c
ch - c = 1.0
°
C/ W, Tc = 25
°
C
θ γ
θ
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