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參數(shù)資料
| 型號： | HAF1009L |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Series Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開關(guān)系列 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HAF1009L |
HAF1009(L), HAF1009(S)
Rev.1.00, May.13.2003, page 3 of 10
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
–10
—
—
A
V
GS
= –3.5, V
DS
= –2 V
Drain current
I
D2
—
—
–10
mA
V
GS
= –1.2V, V
DS
= –2 V
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
–16
—
—
V
I
G
= –800 μA, V
DS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
2.5
—
—
V
I
G
= 100 μA, V
DS
= 0
I
GSS1
—
—
–100
μA
V
GS
= –8 V, V
DS
= 0
I
GSS2
—
—
–50
μA
V
GS
= –3.5 V, V
DS
= 0
I
GSS3
—
—
–1
μA
V
GS
= –1.2 V, V
DS
= 0
Gate to source leak current
I
GSS4
—
—
100
μA
V
GS
= 2.4 V, V
DS
= 0
I
GS(OP)1
—
–0.8
—
mA
V
GS
= –8 V, V
DS
= 0
Input current (shut down)
I
GS(OP)2
—
–0.35
—
mA
V
GS
= –3.5 V, V
DS
= 0
Zero gate voltage drain
current
I
DSS
—
—
–10
μA
V
DS
= –60 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
–1.1
—
–2.15
V
V
DS
= –10 V, I
D
= –1 mA
I
D
= –20 A, V
DS
= –10 V
Note3
I
D
= –20 A, V
GS
= –4 V
Note3
I
D
= –20 A, V
GS
= –10 V
Note3
Forward transfer admittance
|y
fs
|
8.4
14.8
—
S
m
m
pF
Static drain to source on state R
DS(on)
—
33
50
resistance
R
DS(on)
—
20
27
Output capacitance
Coss
—
1500
—
V
DS
= –10 V, V
GS
= 0, f = 1 MHz
Turn-on delay time
td(on)
—
10.6
—
μs
Rise time
tr
—
45
—
μs
Turn-off delay time
td(off)
—
12
—
μs
Fall time
tf
—
13
—
μs
V
GS
= -10 V, I
D
= –20 A,
R
L
= 1.5
Body–drain diode forward
voltage
V
DF
—
–0.95
—
V
I
F
= –40 A, V
GS
= 0
Body–drain diode reverse
recovery time
trr
—
100
—
ns
I
F
= –40 A, V
GS
= 0
diF/dt = 50 A/μs
Over load shut down
operation time
Note4
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
t
os1
—
4.1
—
ms
V
GS
= –5 V, V
DD
= –16 V
t
os2
—
1.5
—
ms
V
GS
= –5 V, V
DD
= –24 V
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