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參數(shù)資料
| 型號： | HAF1009L |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Series Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開關(guān)系列 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HAF1009L |
HAF1009(L), HAF1009(S)
Rev.1.00, May.13.2003, page 6 of 10
Reverse Drain Current I
DR
(A)
R
Body to Drain Diode Reverse
recovery Time
Drain Current I
D
(A)
S
μ
s
Switching Characteristics
-50
-40
-30
-20
-10
0
-0.4
-0.8
-1.2
-1.6
-2.0
V = 0 V
-5 V
-10 V
Source to Drain Voltage V
SD
(V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
10000
1000
100
0
-10
Drain to Source Voltage V
DS
(V)
-20
-30
-40
-60
-50
C
Typical capacitance vs.
Drain to Source Voltage
500
-0.1
-0.5 -1
-5
-50
-10
-100
200
100
1000
20
50
10
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
50
-0.1-0.2 -0.5 -1
-2
-20
-5
-50
-10
-100
20
10
5
2
1
500
200
100
1000
r
V = -10 V, V = -30 V
PW = 300
μ
s, duty < 1 %
tf
d(off)
t
V = 0
f = 1 MHz
d(on)
t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAF1009S | Silicon P Channel MOS FET Series Power Switching |
| HAF2012L | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012S | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB |
| HAF2014 | |
| HAF2015RJ | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF1009S | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF1010RJ | 制造商:Renesas Electronics Corporation 功能描述: |
| HA-F10C | 制造商:JVC Worldwide 功能描述:HEADPHONE |
| HAF10L | 功能描述:散熱片 Heatsk 116.8x25.4x61 For PFE Series RoHS:否 制造商:Ampro By ADLINK 產(chǎn)品:Heat Sink Accessories 安裝風(fēng)格:Through Hole 散熱片材料: 散熱片樣式: 熱阻: 長度: 寬度: 高度: 設(shè)計目的:Express-HRR |
| HAF-10L | 制造商:TDK 功能描述:Heat sink,2.2deg.C/W,116.8x25.4x61mm |
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