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參數(shù)資料
| 型號： | HAT1033T |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 53K |
| 代理商： | HAT1033T |
HAT1033T
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
– 20
V
Gate to source voltage
±
10
V
Drain current
– 3.5
A
Drain peak current
Note1
– 28
A
Body–drain diode reverse drain current I
DR
Channel dissipation
– 3.5
A
Pch
Note2
1.3
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
– 55 to + 150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdow voltage
V
(BR)DSS
– 20
—
—
V
I
D
= – 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
8 V, V
DS
= 0
V
DS
= – 20 V, V
GS
= 0
V
DS
= – 10 V,
I
D
= – 1 mA
I
D
= – 2 A, V
GS
= – 4 V
Note3
I
D
= – 2 A, V
GS
= – 2.5 V
Note3
I
D
= – 2 A, V
DS
= – 10 V
Note3
V
DS
= – 10 V
V
GS
= 0
f = 1MHz
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
±
10
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
– 1
Gate to source cutoff voltage
– 0.4
—
– 1.4
V
Static drain to source on state
—
0.046
0.063
resistance
—
0.061
0.090
Forward transfer admittance
5
8.0
—
S
Input capacitance
—
970
—
pF
Output capacitance
Coss
—
510
—
pF
Reverse transfer capacitance
Crss
—
150
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
16
—
ns
V
GS
= – 4 V, I
D
= – 2 A
V
DD
– 10 V
Rise time
—
100
—
ns
Turn-off delay time
—
245
—
ns
Fall time
—
75
—
ns
Body–drain diode forward voltage
—
– 0.81
– 1.06
V
IF = – 3.5 A, V
GS
= 0
Note3
IF = – 3. 5A, V
GS
= 0
diF/ dt = 20 A/
μ
s
Body–drain diode reverse
recovery time
Note:
3. Pulse test
—
65
—
ns
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