參數(shù)資料
型號(hào): HAT1033T
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 53K
代理商: HAT1033T
HAT1033T
6
–20
–16
–12
–8
–4
0
–0.4
–0.8
–1.2
–1.6
–2.0
0, 5 V
V = –5 V
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
10 μ
100 μ
1 m
10 m
100 m
Pulse Width PW (S)
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
DM
P
PW
T
D =T
ch – f = 139 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
θ
γ θ
θ
Normalized Transient Thermal Impedance vs. Pulse Width
N
s
γ
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