參數(shù)資料
型號: HAT1033T
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 3/9頁
文件大?。?/td> 53K
代理商: HAT1033T
HAT1033T
3
Main Characteristics
2.0
1.5
1.0
0.5
0
50
100
150
200
–0.1
–100
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–30
–3
–0.3
–0.03
10 μs
100 μs
1 ms
10 ms
Ta = 25 °C
1 shot pulse
–20
–16
–12
–8
–4
0
–10 V
–2
–4
–6
–8
–10
–6 V
–20
–16
–12
–8
–4
0
–1
–2
–3
–4
–5
V = –1.5 V
–4 V
–2.5 V
–2 V
Tc = –25 °C
25 °C
75 °C
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = –10 V
Pulse Test
Noe4
DCOpeaionPW<10s
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