參數(shù)資料
型號: HAT1055R
廠商: Renesas Technology Corp.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 2/10頁
文件大?。?/td> 119K
代理商: HAT1055R
HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 2 of 9
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
HAT1055R
HAT1055RJ
Drain to source voltage
V
DSS
–60
±
20
–5
–60
±
20
–5
V
Gate to source voltage
V
GSS
V
Drain current
I
D
I
D
(pulse)
Note1
Note4
A
Drain peak current
–40
–40
A
Avalanche current
I
AP
–5
A
Avalanche energy
E
AR
Pch
Note2
Pch
Note3
Note4
2.14
mJ
Channel dissipation
2
2
W
Channel dissipation
3
3
W
°
C
°
C
Channel temperature
Tch
150
150
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
4. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
–55 to +150
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