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參數(shù)資料
| 型號： | HAT1055R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 119K |
| 代理商： | HAT1055R |
HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 7 of 9
Source Drain Voltage V
SD
(V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8
–6
–4
–2
0
–0.4
0
–0.8
–1.2
–1.6
–2.0
V = 0, 5 V
–10 V
–5 V
Pulse Test
2.5
0.5
1.0
1.5
2.0
25
50
75
100
125
150
0
I =
5 A
V =
25 V
duty < 0.1 %
Rg > 50
Channel Temperature Tch (
°
C)
R
A
Maximum Avalanche Energy vs.
Channel Temperature Derating
D. U. T
Rg
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
-15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
Avalanche Test Circuit
Avalanche Waveform
E = 1
I
2
V
V - V
DSS
DD
2
Vin Monitor
D.U.T.
Vin
-10 V
R
L
V
= -30 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
90%
10%
t
f
Switching Time Test Circuit
Switching Time Waveform
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PDF描述 |
|---|---|
| HAT1055RJ | Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1065T | Ultra low capacitance unidirectional ESD protection diodes, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| HAT1065T-EL-E | Ultra low capacitance unidirectional ESD protection diodes, SOD523 (SC-79), Tape reel SMD |
| HAT1110R | Silicon P Channel Power MOS FET Power Switching |
| HAT1110R-EL-E | Silicon P Channel Power MOS FET Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT1055RJ | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET - Tape and Reel |
| HAT1055RJ-EL-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET, DUAL P-CHAN - Tape and Reel 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HAT1059C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HAT1065R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1065R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
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