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參數(shù)資料
| 型號： | HAT1055RJ |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速電源開關 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 119K |
| 代理商： | HAT1055RJ |
HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 4 of 9
Main Characteristics
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source voltage V
DS
(V)
D
D
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
Note 6: When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
–0.003
–0.001
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
–100
–30
100
μ
s
10
μ
s
PW=10ms
Noe6
DCOperaion(PW<10s)
this area is
limited by R
DS(on)
Ta = 25
°
C
1 shot Pulse
–10
–8
–6
–4
–2
0
–2
–4
–6
–8
–10
–4.5 V
–10 V
–3.5 V
V
GS
=–2.5 V
–6 V
Pulse Test
–10
–8
–6
–4
–2
0
–1
–2
–3
–4
–5
Tc = 75
°
C
25
°
C
–25
°
C
V
DS
= –10 V
Pulse Test
Operation in
C
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
4.0
3.0
2.0
1.0
0
50
100
150
200
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm) PW
≤
10 s
2DieOeain
1DiveOpeaion
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相關代理商/技術參數(shù) |
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|---|---|
| HAT1055RJ-EL-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET, DUAL P-CHAN - Tape and Reel 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
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| HAT1065T | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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