參數(shù)資料
型號: HAT1055RJ
廠商: Renesas Technology Corp.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 5/10頁
文件大?。?/td> 119K
代理商: HAT1055RJ
HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 5 of 9
Drain Current I
D
(A)
D
D
)
S
D
)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Case Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
F
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
–0.1 –0.3
–1
–3
–10
–30
–100
50
20
5
10
1
2
0.5
25
°
C
75
°
C
Tc = –25
°
C
V = –10 V
Pulse Test
–1
–10
–100
–3
–30
0.2
0.5
0.1
0.02
0.01
0.05
V = –4.5 V
Pulse Test
–10 V
0.20
0.15
0.10
0.05
–40
0
40
80
120
160
0
–10 V
I
D
= –1, –2 A
V
GS
= –4.5 V
–1, –2 A
–5 A
–5 A
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1
–0.8
–0.6
–0.4
–0.2
0
–4
0
–8
–12
–16
–20
–2 A
–1 A
V
D
D
Pulse Test
I
D
= –5 A
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