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參數(shù)資料
| 型號： | HAT2022R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 50K |
| 代理商： | HAT2022R |
HAT2022R
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
30
V
Gate to source voltage
±
20
V
Drain current
11
A
Drain peak current
Note1
88
A
Body-drain diode reverse drain current
11
A
Channel dissipation
2.5
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Tstg
– 55 to + 150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
30
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 6 A, V
GS
= 10 V
Note3
I
D
= 6 A, V
GS
= 4 V
Note3
I
D
= 6 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state
—
0.012
0.015
resistance
—
0.017
0.025
Forward transfer admittance
12
18
—
S
Input capacitance
—
1450
—
pF
Output capacitance
Coss
—
950
—
pF
Reverse transfer capacitance
Crss
—
380
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
60
—
ns
V
GS
= 4 V, I
D
= 6 A
V
DD
10 V
Rise time
—
450
—
ns
Turn-off delay time
—
80
—
ns
Fall time
—
160
—
ns
Body–drain diode forward voltage
—
0.8
1.3
V
IF = 11 A, V
GS
= 0
Note3
IF = 11 A, V
= 0
diF/ dt = 20 A/
μ
s
Body–drain diode reverse
recovery time
Note:
3. Pulse test
—
70
—
ns
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