參數(shù)資料
型號: HAT2022R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關
文件頁數(shù): 6/9頁
文件大?。?/td> 50K
代理商: HAT2022R
HAT2022R
6
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Source to Drain Voltage V (V)
R
D
N
s
γ
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
5 V
V = 0, –5 V
10 μ
100 μ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot puse
DM
P
PW
T
D =T
ch – f = 83.3 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
θ
γ θ
θ
Reverse Drain Current vs.
Souece to Drain Voltage
Pulse Test
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