參數(shù)資料
型號(hào): HAT2022R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關(guān)
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 50K
代理商: HAT2022R
HAT2022R
3
Main Characteristics
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
50
40
30
20
10
0
2
4
6
8
10
V = 2.5 V
3.5 V
3 V
10V
6 V
5 V
4.5 V
4 V
20
16
12
8
4
0
1
2
3
4
5
Tc = 75°C
25°C
–25°C
4.0
3.0
2.0
1.0
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
Ta = 25 °C
1 shot Pulse
PW=10ms
10 μs
100 μs
Operation in
this area is
limited by R
DS(on)
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Noe4
DCOpeaion(PW<10s
V = 10 V
Pulse Test
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