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參數(shù)資料
| 型號： | HAT2031T |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| 中文描述： | 硅?通道功率場效應(yīng)晶體管（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 129K |
| 代理商： | HAT2031T |
HAT2031T
10
Cautions
1.
Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copy-
right, trademark, or other intellectual property rights for information contained in this document. Hitachi
bears no responsibility for problems that may arise with third party’s rights, including intellectual property
rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have re-
ceived the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, con-
tact Hitachi’s sales office before using the product in an application that demands especially high quality
and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily
injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety
equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions
and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or fail-
ure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equip-
ment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due
to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor prod-
ucts.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Copyright Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
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