參數(shù)資料
型號(hào): HAT2031T
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET(N溝道功率MOSFET)
中文描述: 硅?通道功率場(chǎng)效應(yīng)晶體管(不適用溝道功率MOSFET的)
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 129K
代理商: HAT2031T
HAT2031T
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.PW
10
μ
s, duty cycle
1 %
2.1 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
2 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
20
±
12
3.5
28
3.5
1
1.5
150
– 55 to + 150
Unit
V
V
A
A
A
W
W
°
C
°
C
Pch
Note2
Pch
Note3
Tch
Tstg
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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