參數(shù)資料
型號(hào): HAT2031T
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET(N溝道功率MOSFET)
中文描述: 硅?通道功率場(chǎng)效應(yīng)晶體管(不適用溝道功率MOSFET的)
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 129K
代理商: HAT2031T
HAT2031T
6
0.2
Reverse Drain Current I (A)
0.5
1
2
5
10
0.1
500
200
100
20
50
10
5
50
40
30
20
10
0
2
4
6
8
10
0
50
200
500
100
0.2
0.5
1
2
5
10
0.1
di/dt = 20 A/
μ
s
V = 0, Ta = 25
°
C
10
8
6
4
2
20
10
1000
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
V = 0
f = 1 MHz
Ciss
Coss
Crss
V
GS
V
DS
I = 3.5 A
V = 5 V
10 V
20 V
V = 20 V
10 V
5 V
tf
r
d(off)
t
d(on)
t
V = 4 V, V = 10 V
PW = 5
μ
s, duty < 1 %
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
S
Switching Characteristics
Drain Current I (A)
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