參數(shù)資料
型號(hào): HAT2167H-EL-E
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel Power MOS FET Power Switching
中文描述: 硅?通道功率MOS場(chǎng)效應(yīng)管電源開(kāi)關(guān)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 94K
代理商: HAT2167H-EL-E
HAT2167H
Rev.5.00 Sep 20, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
±20
1.0
42
Typ
4.2
6.1
70
2700
620
200
0.5
17
8
3.7
11
30
45
6
0.85
30
Max
±10
1
2.5
5.5
9.3
1.10
Unit
V
V
μ
A
μ
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
μ
A, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 20 A, V
GS
= 10 V
Note4
I
D
= 20 A, V
GS
= 4.5 V
Note4
I
D
= 20 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 40 A
V
GS
= 10 V, I
D
= 20 A,
V
DD
10 V, R
L
= 0.5
,
Rg = 4.7
IF = 40 A, V
GS
= 0
Note4
IF = 40 A, V
GS
= 0,
di
F
/ dt = 100 A/
μ
s
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