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參數資料
| 型號： | HAT2167H-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應管電源開關 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 94K |
| 代理商： | HAT2167H-EL-E |
HAT2167H
Rev.5.00 Sep 20, 2005 page 3 of 7
Main Characteristics
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Gate to Source Voltage V
GS
(V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
D
D
)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
1
2
3
4
5
Tc = 75
°
C
25
°
C
-25
°
C
40
30
20
10
0
50
100
150
200
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
V
DS
= 10 V
Pulse Test
500
Ta = 25
°
C
1 shot Pulse
10
μ
s
100
μ
s
Operation in
this area is
limited by R
DS(on)
DC Operaton Tc = 25
°
C
1 ms
V
GS
= 2.2 V
10 V
4.5 V
Pulse Test
2.6 V
2.4 V
2.8 V
3.0 V
10
2
5
1
3
30
1
10
100
1000
0.3
V
GS
= 4.5 V
10 V
Pulse Test
500
400
300
200
100
0
4
8
12
16
20
Pulse Test
I
D
= 50 A
20 A
10 A
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| HAT2169H-EL-E | Silicon N Channel Power MOS FET Power Switching |
| HAT2170H | Silicon N Channel MOSFET Power Switching |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HAT2167N | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2167N-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2168H | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) LFPAK |
| HAT2168H_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2168H-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 30A 5PIN LFPAK - Tape and Reel |
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