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參數(shù)資料
| 型號(hào)： | HAT2167H-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場(chǎng)效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | HAT2167H-EL-E |
HAT2167H
Rev.5.00 Sep 20, 2005 page 5 of 7
Source to Drain Voltage V
SD
(V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= 1
I
AP2
2
V
DSS
V
DSS
– V
DD
Avalanche Test Circuit
Avalanche Waveform
Channel Temperature Tch (
°
C)
R
A
Maximum Avalanche Energy vs.
Channel Temperature Derating
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
N
γ
s
50
40
30
20
10
25
50
75
100
125
150
0
I
AP
= 20 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
5 V
V
GS
= 0
10 V
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
Tc = 25
°
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
P
DM
PW
T
D =T
θ
ch - c(t) =
γ
s (t)
θ
ch - c
θ
ch - c = 6.25
°
C/ W, Tc = 25
°
C
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PDF描述 |
|---|---|
| HAT2168H | Silicon N Channel Power MOS FET Power Switching |
| HAT2169H | Silicon N Channel Power MOS FET Power Switching |
| HAT2169H-EL-E | Silicon N Channel Power MOS FET Power Switching |
| HAT2170H | Silicon N Channel MOSFET Power Switching |
| HAT2170H-EL-E | Silicon N Channel MOSFET Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2167N | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2167N-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2168H | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) LFPAK |
| HAT2168H_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2168H-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 30A 5PIN LFPAK - Tape and Reel |
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