參數(shù)資料
型號(hào): HAT2299WP
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel Power MOS FET Power Switching
中文描述: 硅?通道功率MOS場(chǎng)效應(yīng)管電源開(kāi)關(guān)
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 113K
代理商: HAT2299WP
Rev.1.00 Mar 20, 2007 page 1 of 6
HAT2299WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1528-0100
Rev.1.00
Mar 20, 2007
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
G
D
S S S
1
2 3
D D D
4
5
6 7 8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
8
7
6
5
2 1
3
4
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP
E
AR
Pch
Note2
θ
ch-c
Tch
Tstg
Ratings
150
±
30
14
28
14
28
14
14.7
25
5
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
150
°
C
Note1
Note1
Note3
Note3
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