參數(shù)資料
型號: HAT2220R-EL-E
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 2/4頁
文件大?。?/td> 84K
代理商: HAT2220R-EL-E
HAT2220R
REJ03G1572-0500 Rev.5.00 Jul 20, 2007
Page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
Min
450
3.0
0.55
Typ
0.95
5.5
Max
1
±
0.1
4.5
6.5
Unit
V
μ
A
μ
A
V
S
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 450 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.4 A, V
DS
= 10 V
Note6
I
D
= 0.4 A, V
GS
= 10 V
Note6
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 6. Pulse test
7. Since this device includes two high voltage Power MOS FET chips (V
DSS
450 V), high voltage margin may
occur. (Between No.6 pin and No.7 pin in the outline fig.) Therefore, please be sure to confirm about Electric
discharge between No.6 pin and No.7 pin in the equivalent circuit.
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
140
17
5
22
12
38
47
4.9
0.6
3.2
0.84
120
1.24
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 0.4 A
V
GS
= 10 V
R
L
= 562
Rg = 10
V
DD
= 360 V
V
GS
= 10 V
I
D
= 0.7 A
I
F
= 0.7 A, V
GS
= 0
Note6
I
F
= 0.7 A, V
GS
= 0
di
F
/dt = 100 A/
μ
s
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