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參數資料
| 型號： | HCTS109DMSR |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | Radiation Hardened Dual JK Flip Flop |
| 中文描述： | HCT SERIES, DUAL POSITIVE EDGE TRIGGERED J-KBAR FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP16 |
| 文件頁數： | 5/9頁 |
| 文件大小： | 170K |
| 代理商： | HCTS109DMSR |
14
Specifications HCTS109MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.4
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
+25
o
C
-
-
-
CP to Q, Q
TPLH
VCC = 4.5V
+25
o
C
2
30
ns
TPHL
VCC = 4.5V
+25
o
C
2
35
ns
S to Q
TPLH
VCC = 4.5V
+25
o
C
2
23
ns
S to Q
TPHL
VCC = 4.5V
+25
o
C
2
33
ns
R to Q
TPHL
VCC = 4.5V
+25
o
C
2
33
ns
R to Q
TPLH
VCC = 4.5V
+25
o
C
2
33
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B SUB-
GROUP
DELTA LIMIT
ICC
5
6
μ
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518601
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| HCTS109DTR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual JK Flip Flop |
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| HCTS109K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual JK Flip Flop |
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