參數資料
型號: HD407A4669
廠商: Hitachi,Ltd.
英文描述: Low-Voltage AS Microcomputers with On-Chip DTMF Generation Circuit(帶雙音多頻電路的低電壓微計算機)
中文描述: 低電壓如同在微機芯片的DTMF產生電路(帶雙音多頻電路的低電壓微計算機)
文件頁數: 112/142頁
文件大小: 894K
代理商: HD407A4669
HD404669 Series
112
Check that the socket adapter is firmly mounted on the PROM programmer.
Do not touch the socket adapter or the LSI during the programming. Touching them may affect the
quality of the contacts, which will cause programming errors.
PROM Reliability after Programming:
In general, semiconductor devices retain their reliability,
provided that some initial defects can be excluded. These initial defects can be detected and rejected by
screening. Baking devices under high-temperature conditions is one method of screening that can rapidly
eliminate data-hold defects in memory cells. (Refer to the previous Principles of Programming/Erasure
section.)
ZTAT
TM
microcomputer devices are extremely reliable because they have been subjected to such a
screening method during the wafer fabrication process, but Hitachi recommends that each device be
exposed to 150
°
C at one atmosphere after it is programmed, to ensure its best performance. The
recommended screening procedure is shown in figure 84.
Note: Exposure time is measured from when the temperature in the heater reaches 150
°
C.
*
Write the program data and
verify the values written
Expose to high temperature, without power
150
°
C
±
10
°
C, 48 h
+8 h
0 h
*
Program read check
V = 4.5 V or 5.5 V
Figure 84 Recommended Screening Procedure
Note:
If programming errors occur continuously during PROM programming, suspend programming and
check for problems in the PROM programmer or socket adapter, using a windowed-package
microcomputer with on-chip EPROM, etc. ..... If programming verification indicates errors in
programming or after high-temperature exposure, please inform Hitachi.
Write rate:
A write rate of 95% or above is guaranteed.
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