參數(shù)資料
型號(hào): HGTD3N60A4S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: OSCILLATORS 100PPM 0+70 3.3V 4 4.000MHZ TS HCMOS 5X7MM 4PAD SMD
中文描述: 17 A, 600 V, N-CHANNEL IGBT, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁(yè)數(shù): 3/9頁(yè)
文件大小: 227K
代理商: HGTD3N60A4S
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
7.5V
7.0V
9.0V
8.5V
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
S
,
0
20
30
50
t
S
,
μ
S
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
GE
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTD3N60C3, HGTD3N60C3S
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