參數(shù)資料
型號: HGTD3N60A4S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: OSCILLATORS 100PPM 0+70 3.3V 4 4.000MHZ TS HCMOS 5X7MM 4PAD SMD
中文描述: 17 A, 600 V, N-CHANNEL IGBT, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁數(shù): 5/9頁
文件大?。?/td> 227K
代理商: HGTD3N60A4S
5
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
1
2
4
6
100
200
10
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 3.75
o
C/W
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82
, L = 1mH
V
GE
= 10V
V
GE
= 15V
5
3
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
2
4
6
8
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82
, L = 1mH
10
12
14
16
18
20
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
200
300
400
500
C
C
IES
FREQUENCY = 1MHz
C
OES
C
RES
V
G
,
V
C
,
Q
g
, GATE CHARGE (nC)
I
G
REF = 1.060mA, R
L
= 200
, T
C
= 25
o
C
0
240
120
360
480
600
15
12
9
6
3
0
V
CE
= 400V
V
CE
= 200V
2
4
6
8
10
12
14
V
CE
= 600V
0
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
HGTD3N60C3, HGTD3N60C3S
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